| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films |
| CAO Feng, WANG Yi-Ding, YIN Jing-Zhi, CONG Meng-Long, HAN Liang-Yu |
| State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 |
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| Cite this article: |
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CAO Feng, WANG Yi-Ding, YIN Jing-Zhi et al 2009 Chin. Phys. Lett. 26 114203 |
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Abstract Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300°C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5×10-4Ω・cm is obtained from the film annealed at 400°C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.
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| Keywords:
42.25.Fx
42.70.Km
78.20.-e
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Received: 04 January 2009
Published: 30 October 2009
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| PACS: |
42.25.Fx
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(Diffraction and scattering)
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42.70.Km
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(Infrared transmitting materials)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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