| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Nanoscale Tapered Pt Bottom Electrode Fabricated by FIB for Low Power and Highly Stable Operations of Phase Change Memory |
| LV Shi-Long1, SONG Zhi-Tang1, LIU Yan1,2, FENG Song-Lin1 |
| 1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
|
| Cite this article: |
|
LV Shi-Long, SONG Zhi-Tang, LIU Yan et al 2010 Chin. Phys. Lett. 27 028401 |
|
|
|
Abstract Phase change random access memory (PC-RAM) based on Si2Sb2Te5 with a Pt tapered heating electrode (Pt-THE), which is fabricated using a focus ion beam (FIB), is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
|
| Keywords:
84.37.+q
85.30.De
85.40.Hp
|
|
|
Received: 26 October 2009
Published: 08 February 2010
|
|
| PACS: |
84.37.+q
|
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
85.40.Hp
|
(Lithography, masks and pattern transfer)
|
|
|
|
|
|
[1] Tseng A A 2005 Small 10 924
[2] Karre P S K, Bergstrom P L, Mallick G and Karna S P J 2007 Appl. Phys. 102 024316
[3] Wagner A, Levin J P, Mauer J L, Blauner P G, Kirch S J and Longo P 1990 J. Vac. Sci. Technol. B 8 1557
[4] Ebbesen T W, Lezec H J, Hiura H, Bennett J W, Ghaemi H F and Thio T 1996 Nature 382 54
[5] Hudgens S and Johnson B 2004 Mater. Res. Soc. Bull. 29 829
[6] Lay S 2003 Tech. Dig. Int. Electron Devices Meet (Washington DC 2--5 December 2001) p 255
[7] Hwang Y N, Lee S H, Ahn S J, Lee S Y, Ryoo K C, Hong H S, Koo H C, Yeung F, Oh J H, Kim H J, Jeong W C, Park J H, Horii H, Ha Y H, Yi J H, Koh G H, Jeong G T, Jeong H S and Kinam K 2003 Tech. Dig. Int. Electron Devices Meet (Washington DC 8--10 December 2003) p 893
[8] Oh J H, Park J H, Lim Y S, Lim H S, Oh Y T, Kim J S, Shin J M, Song Y J, Ryoo K C, Lim D W, Park S S, Kim J I, Kim J H, Yu J, Yeung F, Jeong C W, Kong J H, Kang D H, Koh G H, Jeong G T, Jeong H S and Kinam K 2006 Tech. Dig. Int. Electron Devices Meet (Tokyo 11--13 December 2006) p 2.6
[9] Lai S and Lowrey T 2001 Tech. Dig. Int. Electron Devices Meet p 803
[10] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Hudgens S and Bez R 2003 Tech. Dig. Int. Electron Devices Meet p 699
[11] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[12] Chen Y C, Chen H P, Liao Y Y, Lin H T, Chou L H, Kuo J S, Chen P H, Lung S L and Liu R 2003 LSI Symp. Tech. Dig p 32
[13] Xu C, Song Z T, Liu B, Feng S L and Chen B 2008 Appl. Phys. Lett. 92 062103
[14] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J. Appl. Phys. 94 3536
[15] Go M S H 2001 MS thesis (Delft University of Technology)
[16] Melngailis J and Blauner P G 1989 Mater. Res. Soc. Symp. Proc. 147 127
[17] Jeong C W, Kang D H, Ha D W, Song Y J, Oh J H, Kong J H, Yoo J H, Park J H, Ryoo K C, Lim D W, Park S S, Kim J I, Oh Y T, Kim J S, Shin J M, Park J, Fai Y, Kim Y T, Koh G H, Jeong G T, Jeong H S and Kim K 2007 ICMTD (Paris 7--10 May 2007)
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
