Chin. Phys. Lett.  2010, Vol. 27 Issue (5): 057305    DOI: 10.1088/0256-307X/27/5/057305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method
PENG Ying-Cai1,2, FAN Zhi-Dong1, BAI Zhen-Hua1, ZHAO Xin-Wei3, LOU Jian-Zhong1, CHENG Xu1
1College of Electronic and Informational Engineering, Hebei University, Baoding 071002 2Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 3Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan
Cite this article:   
PENG Ying-Cai, FAN Zhi-Dong, BAI Zhen-Hua et al  2010 Chin. Phys. Lett. 27 057305
Download: PDF(496KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.
Keywords: 73.21.Hb      78.55.Ap     
Received: 26 January 2010      Published: 23 April 2010
PACS:  73.21.Hb (Quantum wires)  
  78.55.Ap (Elemental semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/27/5/057305       OR      https://cpl.iphy.ac.cn/Y2010/V27/I5/057305
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
PENG Ying-Cai
FAN Zhi-Dong
BAI Zhen-Hua
ZHAO Xin-Wei
LOU Jian-Zhong
CHENG Xu
[1] Bjork M T, Knoch J, Schmid H, Riel H and Riess 2008 Appl. Phys. Lett. 92 193504
[2] Fang H, Li X D, Song S, Xu X and Zhu J 2009 Nanotechnology 19 255703
[3] Peng Z L, Liang S and Deng L G 2009 Chin. Phys. Lett. 26 127301
[4] Lew K K and Redwing J M 2003 J. Crystal Growth 254 14
[5] Sivakov V, Heroth F and Falk F 2007 J. Crystal Growth 300 288
[6] Fukuda N, Oshima T and Tsurui T 2005 Sci. Technol. Adv. Mater. 6 628
[7] Peng Y C, Fan Z D, Bai Z H and Ma L 2010 Acta Phys. Sin. 59 1169 (in Chinese)
[8] Feng S Q, Yu D P, Zhang H Z, Bai Z G and Ding Y 2000 J. Crystal Growth 209 513
[9] Holmes J D, Johnston K P and Doty R C 2000 Science 287 1471
[10] Torchynska T V, Rodriguez M M, Espinoza F G B, Khomenkova L Y, Korsunska N E and Scherbina L V 2001 Phys. Rev. B 65 115313
[11] Qi J F, White J M and Belcher A M 2003 Chem. Phys. Lett. 372 763
[12] Qiu T, Wu X L, Yang X, Huang G S and Zhang Z Y 2004 Appl. Phys. Lett. 84 3867
[13] Liao L S, Bao X M, Zheng X Q, Li N S and Ming N B 1996 Appl. Phys. Lett. 68 850
[14] Wolkin M V, Jorne J, Fouchez P M, Allan G and Delerue C 1999 Phys. Rev. Lett. 82 197
[15] Prokes S M 1996 Appl. Phys. Lett. 62 3244
[16] Mimura A, Fujii M, Hayashi S and Yamamoto K 1999 Solid State Commun. 109 561
Related articles from Frontiers Journals
[1] ALIREZA Samavati**,S. K. Ghoshal,Z. Othaman. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature[J]. Chin. Phys. Lett., 2012, 29(4): 057305
[2] P. Ohlckers P. Pipinys. Comment on ``Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires''[J]. Chin. Phys. Lett., 2009, 26(5): 057305
[3] YANG Yuan, LI Gui-Ping, GAO Yong, LIU Jing. Characteristics Analysis of Vertical Double Gate Strained Channel Heterostructure Metal-Oxide-Semiconductor-Field-Effect-Transistor[J]. Chin. Phys. Lett., 2009, 26(2): 057305
[4] PENG Zu-Lin, LIANG S., DENG Luo-Gen. Transition Metal Silicide Nanowires Growth and Electrical Characterization[J]. Chin. Phys. Lett., 2009, 26(12): 057305
[5] YANG Yuan, GAO Yong, GONG Peng-Liang. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal--Oxide--Semiconductor Field Effect Transistor[J]. Chin. Phys. Lett., 2008, 25(8): 057305
[6] ZHANG Xue-Qing, LI Hui, LIEW Kim-Meow, LI Yun-Fang, SUN Feng-Wei. Helical Shell Structures of Ni--Al Alloy Nanowires and Their Electronic Transport Properties[J]. Chin. Phys. Lett., 2007, 24(6): 057305
[7] GAO Wen-Zhu, SUN Lang, ZHENG Yi-Song. Electronic Transport through a Waveguide in the Presence of a Magnetic Obstacle[J]. Chin. Phys. Lett., 2007, 24(6): 057305
[8] ZHANG Zheng-Hua, LIU Han-Mao, XIONG Yuan-Qin, XU Wei-Jian, TANG Yuan-Hong. UV--vis Absorption and PL Properties of Self-Assembled Silicon Nanotubes[J]. Chin. Phys. Lett., 2007, 24(2): 057305
[9] PENG De-Jun, CHENG Fang, ZHOU Guang-Hui,. Alternating-Current Conductivity for a Two-Channel Interacting Quantum Wire[J]. Chin. Phys. Lett., 2007, 24(2): 057305
[10] SUN Pu-Nan. Antiresonance Effect in Electronic Tunnelling through a One-Dimensional Quantum Dot Chain[J]. Chin. Phys. Lett., 2006, 23(8): 057305
[11] CEN Zhan-Hong, XU Jun, LIU Yan-Song, HAN Pei-Gao, LI Wei, HUANG Xin-Fan, CHEN Kun-Ji. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method[J]. Chin. Phys. Lett., 2006, 23(4): 057305
[12] CHENG Fang, ZHOU Guang-Hui,. Dynamical Transport Property through an Interacting Quantum Wire[J]. Chin. Phys. Lett., 2005, 22(8): 057305
[13] LIU Jian-Jun, WANG Xue-Feng. Properties of Excitons Bound to Neutral Donors in GaAs Quantum-Well Wires[J]. Chin. Phys. Lett., 2005, 22(3): 057305
[14] LIAO Wen-Hu, ZHOU Guang-Hui. Resonant Photon-Assisted Structure of Conductance through a Quantum Wire[J]. Chin. Phys. Lett., 2005, 22(11): 057305
[15] GUAN Xi-Meng, YU Zhi-Ping. Supercell Approach in Tight-Binding Calculation of Si and Ge Nanowire Bandstructures[J]. Chin. Phys. Lett., 2005, 22(10): 057305
Viewed
Full text


Abstract