| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy |
ZHANG Chen, HAO Zhi-Biao, REN Fan, HU Jian-Nan, LUO Yi
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| State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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ZHANG Chen, HAO Zhi-Biao, REN Fan et al 2010 Chin. Phys. Lett. 27 058101 |
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Abstract The influence of nucleation coalescence on the crystalline quality of AlN films grown on sapphire by plasma-assisted molecular beam epitaxy is investigated. The coalescence speed is controlled by the V/Ⅲ ratio chosen for the growth after nucleation. A slightly Al-rich condition, corresponding to slow coalescence, can significantly reduce the density of edge threading dislocation (TD), which is found to be dominant in AlN epilayers. The cross-sectional TEM image of the AlN epilayer grown under this condition clearly reveals an automatically formed boundary where an abrupt decrease of edge TD density occurs.
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| Keywords:
81.15.-z
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Received: 28 December 2009
Published: 23 April 2010
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| PACS: |
81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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