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Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy |
| WANG Long-Hai1, DAI Ying2, DENG Zhao2 |
| 1School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 4300732State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 |
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WANG Long-Hai, DAI Ying, DENG Zhao 2008 Chin. Phys. Lett. 25 3489-3492 |
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Abstract The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process (TIP-FeCAP) and the innovated integrated process (IIP-FeCAP) are investigated by piezoresponse force microscopy (PFM). The IIP-FeCAP side wall exhibits fine and clear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9V and -9V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.
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| Keywords:
85.50.-n
77.80.Dj
07.79.-v
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Received: 19 June 2008
Published: 29 August 2008
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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77.80.Dj
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(Domain structure; hysteresis)
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07.79.-v
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(Scanning probe microscopes and components)
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[1] Ren T L et al 2002 Chin. Phys. Lett. 19 432
[2] Yan Z et al 2007 Chin. Phys. Lett. 24 3559
[3] Liu G Z et al 2007 Chin. Phys. Lett. 242387
[4] Duan Z X et al 2008 Chin. Phys. Lett. 251472
[5] Li B S et al 2005 Chin. Phys. Lett. 22 1236
[6] Li B Z et al 2005 Chin. Phys. Lett. 22 80
[7] Li W et al 2004 Chin. Phys. Lett. 21 544
[8] Jia Z et al 2006 Chin. Phys. Lett. 23 1042
[9] Wang L H et al 2006 Appl. Phys. Lett. 87073502
[10] Ren T L, Zhao H J, Liu L T and Li Z J 2003 Mater.Sci. Engin. B 99 159
[11] Kim K T et al 2004 Microelectron. Engin. 71294
[12] Aggarwal S et al 2000 Appl. Phys. Lett. 76918
[13] Soyer C et al 2005 J. Appl. Phys. 97 114110
[14] Gruverman A et al 2003 Appl. Phys. Lett. 823071
[15] Zeng H R et al 2005 Chin. Phys. Lett. 22 43
[16] Stolichnov I et al 2002 Appl. Phys. Lett. 80 4804
[17] Wang L H et al 2007 Integrated Ferroelectrics 89 3
[18] Wang L H, Yu J, Wang Y B and Gao J X 2006 J. Mater.Sci.: Mater. Electron. 17 509
[19] Harnagea C et al 2002 Integrated Ferroelectrics 44 113
[20] Eng L M et al 1999 Appl. Phys. Lett. 74 233
[21] Ganpule C S et al 2002 J. Appl. Phys. 911477
[22] Rodriguez B J et al 2004 J. Appl. Phys. 951958
[23] Wen H et al 2006 Appl. Phys. Lett. 88222904
[24] Lim K T et al 2003 J. Vac. Sci. Technol. A 21 1563 |
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