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Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes |
| ZHU Ji-Hong1, ZHANG Shu-Ming1, SUN Xian1, ZHAO De-Gang1, ZHU Jian-Jun1, LIU Zong-Shun1, JIANG De-Sheng1, DUAN Li-Hong1, WANG Hai1, SHI Yong-Sheng1, LIU Su-Ying1, YANG Hui 1,2 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
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| Cite this article: |
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ZHU Ji-Hong, ZHANG Shu-Ming, SUN Xian et al 2008 Chin. Phys. Lett. 25 3485-3488 |
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Abstract InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
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85.40.Uz
81.65.-b
81.70.Fy
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Received: 13 May 2008
Published: 29 August 2008
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