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Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces |
GAO Hai-Yong, YAN Fa-Wang, FAN Zhong-Chao, LI Jin-Min, ZENG Yi-Ping,
WANG Guo-Hong |
| Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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GAO Hai-Yong, YAN Fa-Wang, FAN Zhong-Chao et al 2008 Chin. Phys. Lett. 25 3448-3451 |
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Abstract p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with
nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.
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| Keywords:
78.66.Fd
52.77.Bn
81.65.Cf
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Received: 29 January 2008
Published: 29 August 2008
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