| Original Articles |
|
|
|
|
Effect of Al Doping on Properties of SiC Films |
| SU Jian-Feng, YAO Ran, ZHONG Ze, FU Zhu-Xi |
| Department of Physics, University of Science and Technology of China, Hefei 230026 |
|
| Cite this article: |
|
SU Jian-Feng, YAO Ran, ZHONG Ze et al 2008 Chin. Phys. Lett. 25 3346-3349 |
|
|
|
|
Abstract Undoped and Al-doped 3C-SiC films are deposited on Si(100) substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystallinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.
|
| Keywords:
61.72.Up
68.55.J-
81.15.Gh
|
|
|
Received: 04 April 2008
Published: 29 August 2008
|
|
| PACS: |
61.72.up
|
(Other materials)
|
| |
68.55.J-
|
(Morphology of films)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
|
|
|
|
[1] Liaw P and Davis R F 1985 J. Electrochem. Soc. 132 642
[2] Ghica C, Ristoscu C, Socol G, Brodoceanu D, Nistor L C,Mihailescu I N, Klini A, Fotakis C 2006 Appl. Surf. Sci. 252 4672
[3] Mukaida H, Okumura H, Lee J. H, Daimon H, Sakuma E, MisawaS, Endo K and Yoshida S 1987 J. Appl. Phys. 62 254
[4] Gwiy-Sang C and Kang-San K 2007 Bull. Korean Chem.Soc. 28 533
[5] Pensl G and Choyke W J 1993 Physica B 185 264
[6] Fosberg U, Danielsson O, Henry A, Linnarsson M K andJanzen E 2003 J. Cryst. Growth 253 340
[7] Gali A, Hornos T, Son N T, JanZen E and Choyke W J 2007 Phys. Rev. B 75 045211
[8] Nishizawa S and Pons M 2006 Chem. Vap. Deposition 12 516
[9] Zhu J J, Lin B X, Sun X K, Yao R, Shi C S and Fu Z X 2005 Thin Solid Films 478 218
[10] Kubo N, Kawase T, Asahina S, Kanayama N, Tsuda H,Moritani A and Kitahara K 2004 Jpn. J. Appl. Phys. 437654
[11] Wu Z J and Wang B 2003 The Growth of Thin Films(Beijing: Science Press) pp 181 354 (in Chinese)
[12] Rai-Choudhury P and Hower P L 1973 J. Electrochem.Soc. 120 1761
[13] Cowher M E and Sedgwick T O 1972 J. Electrochem.Soc. 119 1565
[14] Olego D and Cardona M 1982 Phys. Rev. B 253878
[15] Huh S W, Chung H J and Benamara M 2004 J. Appl.Phys. 96 4637
[16] Yuuki I, Tetsuo T, Hajime O, Kazuo A and Sadafumi Y 2006 Chem. Vap. Deposition 12 495
[17] Takahashi K, Nishino S, and Saraie J 1991 J. Cryst.Growth 115 617
[18] Hiraoka Y S and Mashita M 1992 Jpn. J. Appl. Phys. 31 3703 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
