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Band Gap Energies and Refractive Indices of Epitaxial Pb1-xSrxTe Thin Films |
WENG Bin-Bin, WU Hui-Zhen, SI Jian-Xiao, XU Tian-Ning |
Department of Physics, Zhejiang University, Hangzhou 310027 |
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Cite this article: |
WENG Bin-Bin, WU Hui-Zhen, SI Jian-Xiao et al 2008 Chin. Phys. Lett. 25 3334-3337 |
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Abstract Pb1-xSrxTe thin films with different strontium (Sr) compositions are grown on BaF2(111) substrates by molecular beam epitaxy (MBE). Using high resolution x-ray diffraction (HRXRD), we obtain Pb1-xSrxTe latticeconstants, which vary in the range 6.462--6.492 AA. According to the Vegard law and HRXRD data, Sr compositions in Pb1-xSrxTe thin films range from 0.0--8.0%. The Pb1-xSrxTe refractive index dispersions are attained from infrared transmission spectrum characterized by Fourier transform infrared (FTIR) transmission spectroscopy. It is found that refractive index decreases while Sr content increases in Pb1-xSrxTe. We also simulate the Pb1-xSrxTe transmission spectra theoretically to obtain the optical band gap energies which range between 0.320eV and 0.449eV. The simulated results are in good agreement with the FTIR data. Finally, we determine the relation between Pb1-xSrxTe band gap energies and Sr compositions (Eg=0.320+0.510x-0.930x2 +184x3(eV)).
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Keywords:
61.50.Cp
78.20.-e
78.30.Fs
78.20.Ci
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Received: 30 January 2008
Published: 29 August 2008
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PACS: |
61.50.Cp
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78.20.-e
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(Optical properties of bulk materials and thin films)
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78.30.Fs
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(III-V and II-VI semiconductors)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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[1] Chao I N, McCann P J, Yuan W L, O'Rear E A and Yuan S 1998 Thin Solid Films 323 126 [2] Kellermann K, Zimin D, Alchalabi K, Gasser P, Pikhtin N Aand Zogg H 2003 J. Appl. Phys. 94 7053 [3] Wang Q L, Wu H Z, Si J X, Xu T N, Xia M L, Xie Z S and LaoY F 2007 Acta Phys. Sin. 56 4950 (in Chinese) [4] Xu T N, Wu H Z, Si J X and McCann P J 2007 Phys.Rev. B 76 155328 [5] Wu H Z, Cao C F, Si J X, Xu T N, Zhang H J, Wu H F, ChenJ, Shen W Z and Dai N 2007 J. Appl. Phys. 101 103505 [6] Shi Z, Xu G, McCann P J, Fang X M, Dai N, Felix C L,Bewley W W, Vurgaftman I and Meyer J R 2000 Appl. Phys. Lett. 76 3688 [7] Wu H, Zhao F, Jayasinghe L and Shi Z 2002 J. Vac.Sci. Technol. B 20 1356 [8] Majumdar A, Xu H Z, Zhao F, Keay J C, Jayasinghe L,Khosravani S, Lu X, Kelkar V and Shi Z 2004 J. Appl. Phys. 95 939 [9] Partin D L, Thrush C M and Clemens B M 1986 J. Vac.Sci. Thechnol. B 5 687 [10] Si J X, Wu H Z, Xu T N, Cao C F, Huang Z C 2005 Chin. Phys. Lett. 22 2352 [11] Tatian B 1984 Appl. Opt. 23 4477 [12] Swanepoel R 1983 J. Phys. E: Sci. Instrum. 161214 [13] Diaz R, Merino J M, Martin T, Rueda F and Leon M 1998 J. Appl. Phys. 83 616 |
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