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Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot |
DOU Xiu-Ming, SUN Bao-Quan, CHANG Xiu-Ying, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, NIU Zhi-Chuan |
SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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Cite this article: |
DOU Xiu-Ming, SUN Bao-Quan, CHANG Xiu-Ying et al 2008 Chin. Phys. Lett. 25 3231-3233 |
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Abstract We report on the single photon emission from single InAs/GaAs self-assembled Stranski--Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80K, the second-order correlation function at zero time delay, g(2)(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
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Keywords:
42.50.Ar
78.67.Hc
78.55.Cr
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Received: 26 May 2008
Published: 29 August 2008
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