Enhanced Near-Edge Transitions by Unsaturated Si Atoms
in Porous Silicon

Chin. Phys. Lett.

1995, Vol. 12

Issue (4): 245-248 DOI:

Original Articles

Enhanced Near-Edge Transitions by Unsaturated Si Atoms in Porous Silicon

FU Huaxiang;XIE Xide

Department of Physics, Fudan University, Shanghai 200433

Cite this article:

FU Huaxiang, XIE Xide 1995 Chin. Phys. Lett. 12 245-248

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Abstract The photo-induced transition probability for porous silicon under different surface conditions is studied. The enhanced near-edge transitions for the presence of unsaturated Si atoms at the surface of porous silicon are found. The theoretical results are in good agreement with those obtained in several recent experiments. Based on the calculated results, an effective way to improve the photoluminescence efficiency in porous silicon is provided, and a model about the origin of luminescence in porous silicon is suggested.

Keywords: 78.65.-s 78.55.-m

Published: 01 April 1995

PACS:	78.65.-s
	78.55.-m	(Photoluminescence, properties and materials)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I4/0245

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