| Original Articles |
|
|
|
|
Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template |
| XIE Xin-Jian;ZHONG Fei;QIU Kai;LIU Gui-Feng;YIN Zhi-Jun;WANG Yu-Qi;LI Xin-Hua;JI Chang-Jian;HAN Qi-Feng;CHEN Jia-Rong;CAO Xian-Cun |
| Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
|
| Cite this article: |
|
XIE Xin-Jian, ZHONG Fei, QIU Kai et al 2006 Chin. Phys. Lett. 23 1619-1622 |
|
|
|
Abstract We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100°C for 10min. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.
|
| Keywords:
81.05.Ea
81.15.Kk
81.10.-h
81.15.Hi
81.70.Fy
|
|
|
Published: 01 June 2006
|
|
| PACS: |
81.05.Ea
|
(III-V semiconductors)
|
| |
81.15.Kk
|
(Vapor phase epitaxy; growth from vapor phase)
|
| |
81.10.-h
|
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
|
| |
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
| |
81.70.Fy
|
(Nondestructive testing: optical methods)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
