| Original Articles |
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HIGH PRESSURE STUDY OF GaAs-AlXGa1-XAs MULTIPLE QUANTUM WELL STRUCTURE |
| ZHAO XueShu;LI Guohua;HAN Hexiang;WANG Zhaoping;TANG Ruming*;WANG Lijun* |
| Institute of Semiconductors, Academia Sinica, Beijing
*Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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ZHAO XueShu, LI Guohua, HAN Hexiang et al 1987 Chin. Phys. Lett. 4 261-264 |
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Abstract The pressure coefficients between Γ conduction subbands, heavy( h) and light (1) hole subbands are determined. It is found that the pressure coefficient decrease with increasing subband energy or decreasing well width(Lz), from 10.3meV/kbar for the 130Å well to 9.6meV/kbar for the 29Å well. This result shows that the Γ valley of GaAs is not a rigid sphere with same pressure coefficient. Pressure dependence of photoluminescence intensity has been also measured for both the 130Å and 29Å wells. It is markedly different from that of the bulk GaAs.
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Published: 01 June 1987
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