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Electrical Properties and Raman Spectra of BaBi1-xPbxO3 |
| HUANG Sheng-Li;RUAN Ke-Qing;TANG Yu;CAO Lie-Zhao;LI Xiao-Guang |
| Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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HUANG Sheng-Li, RUAN Ke-Qing, TANG Yu et al 2006 Chin. Phys. Lett. 23 1245-1248 |
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Abstract Crystal structure, electrical properties and Raman spectra of BaBi1-xPbxO3 are reported. The result of x-ray diffraction shows that the specimen is pure, and the lattice parameters decrease continuously in the semiconducting range, whereas it vibrates similarly to a sine wave in the superconducting range, which is ascribed to the existence of oxygen vacancies and the function of breathing modes of Bi(Pb)O6. The temperature dependence of resistivity indicates that the electrical property of the samples is connected sensitively with the crystal structures. Raman spectra show that the specimen becomes disorder when x increases, and the critical temperature TC depends not only on the deformation potential of the soft Alg mode derived from the Bi(Pb)O6 rigid rotation, but also on the energy shift of the mode.
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| Keywords:
61.10.Nz
74.25.Fy
78.30.-j
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Published: 01 May 2006
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