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Deep InP Gratings for Opto-Electronic Devices Etched by Cl2/CH4/Ar Inductively Coupled Plasma |
| WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi |
| Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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WANG Jian, TIAN Jian-Bai, XIONG Bing et al 2006 Chin. Phys. Lett. 23 2158-2160 |
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Abstract Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.
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| Keywords:
52.77.Bn
81.65.Cf
42.55.Px
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Published: 01 August 2006
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| PACS: |
52.77.Bn
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(Etching and cleaning)
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81.65.Cf
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(Surface cleaning, etching, patterning)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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