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THE DEEP LEVELS IN GaSb/AlSb(00l) SUPERLATTICES |
| HUANG Mingzhu;GU Yiming;REN Shangyuan |
| Department of Physics, University of Science and Technology of China, Hefei |
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| Cite this article: |
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HUANG Mingzhu, GU Yiming, REN Shangyuan 1987 Chin. Phys. Lett. 4 253-256 |
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Abstract The electronic states, especially the deep levels of the defects in GaSb/AlSb (001) superlattices have been calculated. The band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quantum well width. The impurity deep levels exhibit a position dependent relation.
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Published: 01 June 1987
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