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CNx Films Deposited by Laser Ablation of Graphite Under Low Energy Nitrogen-Ion Beam Bombardment
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REN Zhongmin;XIONG Xiaxing;DU Yuancheng;WU Jiada;YING Zhifeng;QIU Yuanxun;LI Fuming |
State Key Joint Laboratory for Material Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433 |
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Cite this article: |
REN Zhongmin, XIONG Xiaxing, DU Yuancheng et al 1994 Chin. Phys. Lett. 11 461-464 |
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Abstract Deposition of CNx thin films on Si(111) has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment. Films with a maximum N-concentration of 34% are obtained. The N species is found to be relatively constant along the depth of films. X-ray spectroscopy data confirm the existence of covalent C - N bonds. Nanocrystallites structure has been detected in the amorphous matrix of the films. Qualitative hardness tests indicate that the films are relatively hard and adhesive.
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Keywords:
81.15.Jj
34.50.Rk
62.20.-x
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Published: 01 July 1994
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PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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34.50.Rk
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(Laser-modified scattering and reactions)
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62.20.-x
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(Mechanical properties of solids)
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