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Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects |
CHI Yue-Meng;SHI Jun-Jie |
State Key Laboratory for Mesoscopic Physics, and School of Physics, Peking University, Beijing 100871 |
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Cite this article: |
CHI Yue-Meng, SHI Jun-Jie 2006 Chin. Phys. Lett. 23 2206-2209 |
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Abstract Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.
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Keywords:
73.21.La
71.35.-y
77.65.Ly
77.84.Bw
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Published: 01 August 2006
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PACS: |
73.21.La
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(Quantum dots)
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71.35.-y
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(Excitons and related phenomena)
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77.65.Ly
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(Strain-induced piezoelectric fields)
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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