Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

doi:10.1088/0256-307X/27/4/047802

Chin. Phys. Lett.

2010, Vol. 27

Issue (4): 047802 DOI: 10.1088/0256-307X/27/4/047802

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

WANG Qi-Liang, LÜ Xian-Yi, LI Liu-An, CHENG Shao-Heng, LI Hong-Dong

State Key Laboratory of Superhard Materials, Jilin University,Changchun 130012

Cite this article:

WANG Qi-Liang, LÜ, Xian-Yi et al 2010 Chin. Phys. Lett. 27 047802

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Abstract

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^-1.

Keywords: 78.30.-j 81.05.Ug 81.15.Gh

Received: 30 November 2009 Published: 27 March 2010

PACS:	78.30.-j	(Infrared and Raman spectra)
	81.05.ug	(Diamond)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/4/047802 OR https://cpl.iphy.ac.cn/Y2010/V27/I4/047802

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	WANG Qi-Liang
	LÜ
	Xian-Yi
	LI Liu-An
	CHENG Shao-Heng
	LI Hong-Dong

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[4] Huang S et al 2006 Surface and Coatings Technology 200 3151
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[6] Li D S et al 2008 Solid State Ionics 179 1263
[7] Li B et al 2008 New Carbon Mater . 23 245
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[9] Chen G C et al 2006 Chin. Phys. Lett. 23 2266
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