| Original Articles |
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Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs
Single Quantum Wells
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| SHEN Wenzhong;SHEN Xuechu;TANG Wenguo;T. Andersson* |
| National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083
*Department of Physics, Chalmers University of Technology, 5-41296 Goteborg, Sweden |
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| Cite this article: |
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SHEN Wenzhong, SHEN Xuechu, TANG Wenguo et al 1994 Chin. Phys. Lett. 11 693-696 |
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Abstract Resonably good agreement among the photoluminescence, absorption, in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In0.20Ga0.80As/GaAs single quantum wells. The strain of each sample has been deduced.
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| Keywords:
72.40.+w
73.40.Lq
78.55.-m
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Published: 01 November 1994
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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78.55.-m
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(Photoluminescence, properties and materials)
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Abstract
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