| Original Articles |
|
|
|
|
Photoluminescence Studies on Very High-Density Two-Dimensonal
Electron Gases in Pseudomorphic Modulation-Doped Quantum Wells
|
| LI Wei;WANG Zhanguo;LIANG Jiben;XU Bo;ZHU Zhanping;SONG Aimin;ZHENG Wanhua;YANG Bin |
| Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academia Sinica, Beijing 100083 |
|
| Cite this article: |
|
LI Wei, WANG Zhanguo, LIANG Jiben et al 1994 Chin. Phys. Lett. 11 758-761 |
|
|
|
Abstract We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si δ-doped GaAs/ln0.18Ga0.82 As/Al0.25 Ga0.75,As quantum wells (Ns = 4.24 x 1012 cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808eV were observed, which are attributed to the subband exciton emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.
|
| Keywords:
71.35.+z
78.55.Cr
|
|
|
Published: 01 December 1994
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
