Chin. Phys. Lett.  2006, Vol. 23 Issue (12): 3338-3340    DOI:
Original Articles |
Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition
Department of Physics;Lanzhou University;Lanzhou 730000
LI Jun-Shuai, WANG Jin-Xiao, YIN Min, GAO Ping-Qi, HE De-Yan
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Department of Physics, Lanzhou University, Lanzhou 0000 2006 Chin. Phys. Lett. 23 3338-3340
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Abstract Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (<0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
Keywords: 72.80.Jc      52.80.Yr     
Published: 01 December 2006
PACS:  72.80.Jc (Other crystalline inorganic semiconductors)  
  52.80.Yr (Discharges for spectral sources)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I12/03338
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Department of Physics
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