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Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition |
Department of Physics;Lanzhou University;Lanzhou 730000
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LI Jun-Shuai, WANG Jin-Xiao, YIN Min, GAO Ping-Qi, HE De-Yan |
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Cite this article: |
Department of Physics, Lanzhou University, Lanzhou 0000 2006 Chin. Phys. Lett. 23 3338-3340 |
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Abstract Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (<0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
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Keywords:
72.80.Jc
52.80.Yr
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Published: 01 December 2006
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PACS: |
72.80.Jc
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(Other crystalline inorganic semiconductors)
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52.80.Yr
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(Discharges for spectral sources)
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