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Enhancement of Electron Mobility by an Intense High-Frequency Irradiation in GaAs-Based Two-Dimensional Systems |
| CHEN Yi-qiao;LEI Xiao-lin |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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CHEN Yi-qiao, LEI Xiao-lin 1999 Chin. Phys. Lett. 16 134-136 |
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Abstract A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz, based on the tirne-dependent, nonlinear steady-state response to the applied electric field. It is found that although at low temperature (T = 10 K ) the dc mobility of the systems is suppressed by the intense radiation field, in agreement with the available experimental observation, the effect can be reversed at elevated temperature. At T = 77 and 300 K, the dc mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.
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| Keywords:
72.30.+q
72.20. Ht
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Published: 01 February 1999
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