Chin. Phys. Lett.  1991, Vol. 8 Issue (4): 187-190    DOI:
Original Articles |
Investigation of Optical Properties of Amorphous Gap Films
XU Jianhong;CHEN Kunji;ZHU Enjun*
Department of Physics and Labrotory of Solid State Microstructures, Nanjing Uniuersity, Nanjing 210008 *Department of Computer Science and Institute of Microelectronics, Peking University, Beijing 100871
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XU Jianhong, CHEN Kunji, ZHU Enjun 1991 Chin. Phys. Lett. 8 187-190
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Abstract The optical properties of amorphous Gap (a-Gap) films prepared by plasma enhanced transport deposition method in the system of Ga-PCl3-H2 have been studied. The optical energy band gap Eoptg of a-Gap films is about 1.6 e V which depends on the contents of Cl atoms. The results of exponential absorption edge indicate that there is a high density of band-tail states in the optical energy band gap.
Keywords: 61.40.+b      78.65.Fa      81.15.Gh     
Published: 01 April 1991
PACS:  61.40.+b  
  78.65.Fa  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1991/V8/I4/0187
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