EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL

Chin. Phys. Lett.

1989, Vol. 6

Issue (11): 507-510 DOI:

Original Articles

EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL

MAO Zaixian;MA1 Zhenhong;ZHOU Shiren^*;YE Shuichi^*

Institute of Physics, Academia Sinica, Beijing, 100080 ^*Harbin Institute of Technology, Harbin, 150006

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MAO Zaixian, MA Zhenhong, ZHOU Shiren et al 1989 Chin. Phys. Lett. 6 507-510

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Abstract The growth striation, the resistant homogeneity, and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski (MCZ) and Czochralski growth methods (CZ) were investigated. The oxygen concentration in MCZ silicon is more uniform and controllable. It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.

Keywords: 72.80.-r 61.70.-r

Published: 01 November 1989

PACS:	72.80.-r	(Conductivity of specific materials)
	61.70.-r

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I11/0507

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