REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Chin. Phys. Lett.

1989, Vol. 6

Issue (10): 451-454 DOI:

Original Articles

REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

XIAO Guangming;YIN Shiduan;ZHANG Jingping;FAN Tiwen;LIU Jiarui^*;DING Aiju^*;ZHOU Junming^*;ZHU Peiruan^*

Institute of Semiconductors, Academia Sinica, Beijing ^*Institute of Physics, Academia Sinica, Beijing

Cite this article:

XIAO Guangming, YIN Shiduan, ZHANG Jingping et al 1989 Chin. Phys. Lett. 6 451-454

Download: PDF(63KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract 4.2MeV ⁷Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of ~μm thick on Si substrates by Si⁺ implantation (0.6-2.6Me V) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.

Keywords: 61.70.At 81.10.Jt

Published: 01 October 1989

PACS:	61.70.At
	81.10.Jt	(Growth from solid phases (including multiphase diffusion and recrystallization))

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I10/0451

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	XIAO Guangming
	YIN Shiduan
	ZHANG Jingping
	FAN Tiwen
	LIU Jiarui
	DING Aiju
	ZHOU Junming
	ZHU Peiruan

Related articles from Frontiers Journals

[1]	JI Xiao-Rui, YANG Xiao-Hong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2012, 29(3): 451-454
[2]	GAO Feng, JIA Xiao-Peng, MA Hong-An, GUO Wei, LIU Xiao-Bing. Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2008, 25(6): 451-454
[3]	ZHU Bin, DAI Ye, MA Hong-Liang, LIN Geng, QIU Jian-Rong. Space-Selective Precipitation of Ba₂TiSi₂O₈Crystals in Sm³⁺-Doped BaO--TiO₂--SiO₂ Glass by Femtosecond Laser Irradiation[J]. Chin. Phys. Lett., 2008, 25(1): 451-454
[4]	DENG Guo-Chu, DING Ai-Li, ZHENG Xin-Sen, CHENG Wen-Xiu, QIU Ping-Sun. Growth of Zinc Oxide Thornballs by a Novel Method[J]. Chin. Phys. Lett., 2005, 22(7): 451-454
[5]	LI Tao, YANG Shao-Guang, HUANG Li-Sheng, GU Ben-Xi, DU You-Wei. Formation of Co₃O₄ Nanotubes and the Magnetic Behaviour at Low Temperature[J]. Chin. Phys. Lett., 2004, 21(5): 451-454
[6]	LIN Xuan-Ying, HUANG Chuang-Jun, LIN Kui-Xun, YU Yun-Peng, YU Chu-Ying, CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films by SiCl₄/H₂ rf Plasma Enhanced Chemical Vapor Deposition [J]. Chin. Phys. Lett., 2003, 20(10): 451-454
[7]	XING Ying-Jie, XI Zhong-He, YU Da-Peng, HANG Qing-Ling, YAN Han-Fei, FENG Sun-Qi, XUE Zeng-Quan. Growth of Silicon Nanowires by Heating Si Substrate[J]. Chin. Phys. Lett., 2002, 19(2): 451-454
[8]	PAN Zhong, LI Lian-He, XU Ying-Qiang, ZHANG Wei, LIN Yao-Wang, ZHANG Rui-Kang, ZHONG Yuan, REN Xiao-Min. GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 μm[J]. Chin. Phys. Lett., 2001, 18(9): 451-454
[9]	PAN Zhong, LI Lian-He, DU Yun, LIN Yao-Wang, WU Rong-Han. High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2001, 18(5): 451-454
[10]	ZHANG Tie-chen, YU San, LI Dong-mei, GUO Wei-li, GAO Chun-xiao, ZOU Guang-tian. Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing[J]. Chin. Phys. Lett., 1998, 15(1): 451-454
[11]	LI Xiangyang, CHENG Huansheng, YANG Fujia. Damage Production and Annealing During MeV He Ion RBS/Channeling Analysis of GaP [J]. Chin. Phys. Lett., 1994, 11(4): 451-454
[12]	TIAN Renhe. Effects of H⁺-Implantation on the Formation of Secondary Defects in Self-Implanted Si(100)[J]. Chin. Phys. Lett., 1993, 10(5): 451-454
[13]	XIAO Guangming, YIN Shiduan, ZHANG Jingping, DING Aiju, DONG Aihua, ZHU Peiran, ZHOU Junming, LIU Jiarui. Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates*[J]. Chin. Phys. Lett., 1991, 8(3): 451-454
[14]	LI Jianming. NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON [J]. Chin. Phys. Lett., 1989, 6(10): 451-454

Viewed

Full text

Abstract