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PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES |
| WANG Ruozhen*;ZHAO Mingshan*;LIN Zhenjin*;HAN Zhiyong;JIANG Desheng;LIANG Jiben;ZHUANG Weihua |
| *Department of Physics, Beijing Normal University, Beijing
Institute of Semiconductors, Academia, Beijing |
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| Cite this article: |
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WANG Ruozhen, ZHAO Mingshan, LIN Zhenjin et al 1987 Chin. Phys. Lett. 4 189-192 |
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Abstract Photoreflectance of GaAs doping superlattices has been measured at 300K. The spectra exhibits features corresponding to spatially direct transitions due to quantized electron or hole states. We demonstrate the utility of the photoreflectance technique for studying quantum size effects in doping superlattices.
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Published: 01 April 1987
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