| Original Articles |
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Photocurrent Properties of AlGaN/GaN/AlGaN Multilayer Structure on Si |
| JIANG Ruo-Lian;ZHAO Zuo-Ming;CHEN Pen;XI Dong-Juan;SHEN Bo;ZHANG Rong;ZHENG You-Dou |
| Department of Physics, Nanjing University, Nanjing 210093
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| Cite this article: |
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JIANG Ruo-Lian, ZHAO Zuo-Ming, CHEN Pen et al 2001 Chin. Phys. Lett. 18 1660-1662 |
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Abstract Al0.2Ga0.8N/GaN/Al0.2Ga0.8N multilayer structures and GaN monolayer structures with AlN as the buffer layers were grown on Si substrates by metal-organic chemical vapor deposition. The photocurrent responses of these structures were measured and analysed. The multilayer structures showed a high response in a narrow range of wavelength. The peak wavelength is located at 365 nm at which the responsivity is as high as 24A/W under 5.5 V bias; this is much higher than the GaN monolayer structure. This high responsivity results mainly from the high polarization electric-field in the GaN layer of the Al0.2Ga0.8N/GaN/Al0.2Ga0.8N heterostructure.
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| Keywords:
78.66.Fd
73.61.Ey
85.60.Bt
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Published: 01 December 2001
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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73.61.Ey
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(III-V semiconductors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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