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Microstructures of GaN Films Laterally Overgrown on Si(111) by Hydride Vapor Phase Epitaxy
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| CHEN Zhi-Zhong1,2;ZHANG Rong1;ZHU Jian-Min1;QIN Zhi-Xin2;SHEN Bo1,
GU Shu-Lin1;WANG Feng1;ZHENG You-Dou1;ZHANG Guo-Yi2;LI Zhi-Feng3;L. F. KUECH4 |
| 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, National Key Laboratory for Nanostructure and Mesoscopic Physics, Peking University, Beijing 100871
3National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
4Department of Chemical Engineering, University of Wisconsin, Madison, WI53706, USA |
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| Cite this article: |
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CHEN Zhi-Zhong, ZHANG Rong, ZHU Jian-Min et al 2002 Chin. Phys. Lett. 19 375-377 |
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Abstract We have investigated the microstructures of GaN films laterally epitaxially overgrown (LEO) on Si (111) substrates by hydride vapor phase epitaxy. The threading dislocation density in the LEO GaN is reduced by about two orders. Different etching angles of the two sidewalls of SiO2 masks (66°and 90°) lead to the asymmetry of the LEO and cause the particular microstructures of LEO GaN. In micro-Raman spectra, the intensities vary weakly periodically about 5μm perpendicular to the mask stripes. The indistinction selective growth in the top surface is discussed.
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| Keywords:
61.72.-y
78.30.Fs
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Published: 01 March 2002
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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78.30.Fs
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(III-V and II-VI semiconductors)
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