| Original Articles |
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Fast Growth of Polycrystalline Film in SiCl4/H2 Plasma |
| HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui |
| Department of Physics, Shantou University, Shantou 515063 |
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| Cite this article: |
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HUANG Rui, LIN Xuan-Ying, YU Yun-Peng et al 2004 Chin. Phys. Lett. 21 1168-1170 |
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Abstract We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300°C from SiCl4/H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2/SiCl4, but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio of H2/SiCl4. The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4/H2 plasma. By means of adjusting the matching relation between the flow ratio of H2/SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5Å/s, with a crystalline fraction of 75% and an average crystallite size of 400-500 nm in diameter.
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| Keywords:
81.15.Gh
82.33.Xj
68.35.Rh
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Published: 01 June 2004
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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82.33.Xj
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(Plasma reactions (including flowing afterglow and electric discharges))
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68.35.Rh
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(Phase transitions and critical phenomena)
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