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Splitting Behaviour of Implanted MeV Au+ Ions in LiB3O5 |
| WANG Ke-ming1,2;SHI Bo-rong1,2;Nelson Cue2;LU Fei1;WANG Feng-xiang1;XIE Zhao-xia1;SHEN Ding-yu3;LIU Yao-gang4
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| 1Department of Physics, Shandong University, Jinan 250100
2Department of Physics, Hong Kong University of Science and Technology, Hong Kong
3Laboratory of Heavy Ion Physics, Peking University, Beijing 100871
4Institute of Crystal Materials, Shandong University, Jinan 250100
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| Cite this article: |
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WANG Ke-ming, SHI Bo-rong, Nelson Cue et al 2000 Chin. Phys. Lett. 17 40-42 |
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Abstract The diffusion behaviour of 1.0 and 2.0MeV Au+ implanted into LiB3O5 single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions. Annealing was performed at temperatures of 600, 700, and 800°C each for 30min. The results show that the diffusion behaviour is quite different in two cases. In LiB3O5, the depth distribution of the 1.0 MeV Au is nearly Gaussian and becomes bimodal after annealing at 800°C for 30min. But in the case of 2.0MeV, the depth distribution of as implanted Au+ in LiB3O5 has splitting behaviour. After 800°C for 30min annealing, there is no obvious diffusion observed. The precise interpretation is needed.
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| Keywords:
66.30.Jt
61.80.Jh
61.72.Ww
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Published: 01 January 2000
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