Chin. Phys. Lett.  1986, Vol. 3 Issue (1): 1-4    DOI:
Original Articles |
AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS
PAN shihong1 MO Dang2 W.E.Spicer3
1Department of Physics, Nankai University, Tianjin 2Department of Physics, Zhongshan University, Guangzhou 3Solid State Electronics Laboratory, Stanford University, U.S.A
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PAN shihong MO Dang W.E.Spicer 1986 Chin. Phys. Lett. 3 1-4
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Abstract An improved defect model has been proposed by combination of the defect model with the Bardeen model. The predictions based on this model can qualitatively explain the experimental results of the Schottky barrier formation on GaAs(110).
Published: 01 January 1986
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