Original Articles |
|
|
|
|
Strong Electron Field Emission from Nano-CdS Modified Porous Silicon |
XU Ling1;HAN Guan-Qi1;WENG Jian1;TAM Hoi-Lam2;Li King-Fai2;ZHANG Yu1;XU Jun1;HUANG Xin-Fan1;CHEAH Kok-Wai1 |
1State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong |
|
Cite this article: |
XU Ling, HAN Guan-Qi, WENG Jian et al 2004 Chin. Phys. Lett. 21 2049-2050 |
|
|
Abstract A nano - CdS modified porous silicon (nano - CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano - CdS/PS is about 4.0V/m and the emission current reaches about 20μA/cm2 at 5.0V/μm. This emission current is 20 times larger than that of the PS substrate without nano - CdS modification. The strong field emission properties make the nano - CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.
|
Keywords:
81.07.Ta
79.70.+q
|
|
Published: 01 October 2004
|
|
PACS: |
81.07.Ta
|
(Quantum dots)
|
|
79.70.+q
|
(Field emission, ionization, evaporation, and desorption)
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|