Chin. Phys. Lett.  2004, Vol. 21 Issue (10): 2049-2050    DOI:
Original Articles |
Strong Electron Field Emission from Nano-CdS Modified Porous Silicon
XU Ling1;HAN Guan-Qi1;WENG Jian1;TAM Hoi-Lam2;Li King-Fai2;ZHANG Yu1;XU Jun1;HUANG Xin-Fan1;CHEAH Kok-Wai1
1State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong
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XU Ling, HAN Guan-Qi, WENG Jian et al  2004 Chin. Phys. Lett. 21 2049-2050
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Abstract A nano - CdS modified porous silicon (nano - CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano - CdS/PS is about 4.0V/m and the emission current reaches about 20μA/cm2 at 5.0V/μm. This emission current is 20 times larger than that of the PS substrate without nano - CdS modification. The strong field emission properties make the nano - CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

Keywords: 81.07.Ta      79.70.+q     
Published: 01 October 2004
PACS:  81.07.Ta (Quantum dots)  
  79.70.+q (Field emission, ionization, evaporation, and desorption)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I10/02049
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XU Ling
HAN Guan-Qi
WENG Jian
TAM Hoi-Lam
Li King-Fai
ZHANG Yu
XU Jun
HUANG Xin-Fan
CHEAH Kok-Wai
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