Chin. Phys. Lett.  2003, Vol. 20 Issue (1): 158-160    DOI:
Original Articles |
A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect
LIN Qing;ZHANG Zheng-Xuan;ZHU Ming;XIE Xin-Yun;SONG Hua-Qing;LIN Cheng-Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming et al  2003 Chin. Phys. Lett. 20 158-160
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Abstract A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.

Keywords: 85.30.De      73.40.Ty      02.60.Cb     
Published: 01 January 2003
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
  02.60.Cb (Numerical simulation; solution of equations)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I1/0158
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LIN Qing
ZHANG Zheng-Xuan
ZHU Ming
XIE Xin-Yun
SONG Hua-Qing
LIN Cheng-Lu
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