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P-Type Doping of GaN by Mg+ Implantation |
| YAO Shu-De1,3;ZHOU Sheng-Qiang1;YANG Zi-Jian1;LU Yi-Hong2;SUN Chang-Chun1;SUN Chang1;ZHANG Guo-Yi1;VANTOMME Andre3;PIPELEERS Bert3;ZHAO Qiang |
| 1School of Physics, Peking University, Beijing 100871
2College of Chemistry and Molecular Engineering, Peking University, Beijing 100871
3Instituut voor Kern-en Stralingsfysica, Katholieke Universiteit of Leuven, B-3001, Leuven, Belgium |
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| Cite this article: |
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YAO Shu-De, ZHOU Sheng-Qiang, YANG Zi-Jian et al 2003 Chin. Phys. Lett. 20 102-104 |
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Abstract Mg+ and Mg+ + P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channeling spectrometry before (Xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.
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| Keywords:
61.72.Vv
82.80.Yc
74.25.Fy
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Published: 01 January 2003
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