Chin. Phys. Lett.  2004, Vol. 21 Issue (10): 2016-2018    DOI:
Original Articles |
Improvement of Properties of p-GaN by Mg Delta Doping
PAN Yao-Bo;YANG Zhi-Jian;LU Yu;LU Min;HU Cheng-Yu;YU Tong-Jun;HU Xiao-Dong;ZHANG Guo-Yi
School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871
Cite this article:   
PAN Yao-Bo, YANG Zhi-Jian, LU Yu et al  2004 Chin. Phys. Lett. 21 2016-2018
Download: PDF(286KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.
Keywords: 61.72.Vv      73.61.Ey      81.15.Gh     
Published: 01 October 2004
PACS:  61.72.Vv  
  73.61.Ey (III-V semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I10/02016
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
PAN Yao-Bo
YANG Zhi-Jian
LU Yu
LU Min
HU Cheng-Yu
YU Tong-Jun
HU Xiao-Dong
ZHANG Guo-Yi
Related articles from Frontiers Journals
[1] LU Li,CHANG Hu-Dong,SUN Bing,WANG Hong,XUE Bai-Qing,ZHAO Wei,LIU Hong-Gang**. Solid Phase Reactions of Ni-GaAs Alloys for High Mobility III–V MOSFET Applications[J]. Chin. Phys. Lett., 2012, 29(4): 2016-2018
[2] ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. Chin. Phys. Lett., 2012, 29(3): 2016-2018
[3] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 2016-2018
[4] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 2016-2018
[5] FENG Wei**. Terahertz Current Oscillation in Wurtzite InN[J]. Chin. Phys. Lett., 2012, 29(1): 2016-2018
[6] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 2016-2018
[7] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 2016-2018
[8] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 2016-2018
[9] LI Deng-Feng **, GUO Zhi-Cheng, LI Bo-Lin, DONG Hui-Ning, XIAO Hai-Yan . Structural and Electronic Properties of Sulfur-Passivated InAs(001) ( 2×6 ) Surface[J]. Chin. Phys. Lett., 2011, 28(8): 2016-2018
[10] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 2016-2018
[11] Sur S., Ö, ztürk Z., Ö, zta&scedil, M.**, Bedir M., Ö, zdemir Y. . Effect of Water Concentration on the Characterization of Sprayed Cd0.5Zn0.5S Films[J]. Chin. Phys. Lett., 2011, 28(6): 2016-2018
[12] SUI Yan-Ping**, YU Guang-Hui . Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 2016-2018
[13] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 2016-2018
[14] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 2016-2018
[15] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 2016-2018
Viewed
Full text


Abstract