| Original Articles |
|
|
|
|
Dielectric Characterization of Free-Standing Diamond Films |
| ZHANG Heng-Da;CHEN Guang-Chao; LI Cheng-Ming;TANG Wei-Zhong; LÜ Fan-Xiu |
| School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 |
|
| Cite this article: |
|
ZHANG Heng-Da, CHEN Guang-Chao, LI Cheng-Ming et al 2002 Chin. Phys. Lett. 19 1695-1696 |
|
|
|
Abstract The dielectric properties of free-standing diamond films grown by the dc arc-jet plasma method are measured by an impedance analyser in the temperature range of 298-573 K and at frequencies between 1000 Hz and 1 MHz. In the temperature and frequency ranges, the loss tangent can be expressed as a function of temperature and frequency. The loss tangent increases slightly with increasing temperature and frequency. The dielectric properties of the diamond films decrease with the increasing deposited temperature. The structure and quality of diamond films have been analysed by scanning electron microscopy, x-ray diffraction and Raman spectroscopy.
|
| Keywords:
77.22.Jp
77.55.Tf
81.15.Gh
|
|
|
Published: 01 November 2002
|
|
| PACS: |
77.22.Jp
|
(Dielectric breakdown and space-charge effects)
|
| |
77.55.Tf
|
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
