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A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect |
| ZHU Ming;LIN Qing;ZHANG Zheng-Xuan;LIN Cheng-Lu |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHU Ming, LIN Qing, ZHANG Zheng-Xuan et al 2003 Chin. Phys. Lett. 20 767-769 |
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Abstract Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI device and circuit, we propose a novel device structure to suppress the floating body effect. In the new structure there is a buried p+ region under the n+ source and that region is extended to outside of the source, and this additional p+ region provides a path for accumulated holes to flow out of the body. Numerical simulations were carried out with Medici, and the output characteristics and gate characteristics were compared with those of conventional SOI counterparts. The simulated results show the suppression of floating body effect in the novel SOI device as expected.
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85.30.De
73.40.Ty
02.60.Cb
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Published: 01 May 2003
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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02.60.Cb
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(Numerical simulation; solution of equations)
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