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Transient Thermal Analysis of InAlAs/InGaAs/InP Mid-Infrared Quantum Cascade Lasers |
| ZHANG Yong-Gang;HE You-Jun;LI Ai-Zhen |
| State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Yong-Gang, HE You-Jun, LI Ai-Zhen 2003 Chin. Phys. Lett. 20 678-681 |
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Abstract The transient thermal characteristics of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers in pulse driving conditions have been simulated by using the finite-element method, and evaluated experimentally. The results show that specific heat of the materials and heat capacity of the device should be take into account to simulate the thermal performance of the devices in pulse driving conditions. In this case, good coincidence of the simulation with the measured results has been reached and the much higher apparent thermal resistance of the quantum cascade lasers under pulse driving conditions could be explained.
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| Keywords:
42.55.Px
81.05.Ea
81.07.St
65.40.-b
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Published: 01 May 2003
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.05.Ea
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(III-V semiconductors)
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81.07.St
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(Quantum wells)
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65.40.-b
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(Thermal properties of crystalline solids)
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