Chin. Phys. Lett.  2003, Vol. 20 Issue (2): 308-310    DOI:
Original Articles |
Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
HAN Zheng-Fu1,2;LIAO Yan-Lin4;ZHOU Hong-Jun2;JIANG Zuo-Hong3;ZHANG Guo-Bin2;CAO Zhuo-Liang1,4
1Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 3Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026 4Department of Physics, Anhui University, Hefei 230039
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HAN Zheng-Fu, LIAO Yan-Lin, ZHOU Hong-Jun et al  2003 Chin. Phys. Lett. 20 308-310
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Abstract A successful direct, etching system excited by a vacuum ultraviolet hollow cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct etched by synchrotron radiation.

Keywords: 81.40.Wx      85.40.Hp      81.65.Cf      82.50.Hp     
Published: 01 February 2003
PACS:  81.40.Wx (Radiation treatment)  
  85.40.Hp (Lithography, masks and pattern transfer)  
  81.65.Cf (Surface cleaning, etching, patterning)  
  82.50.Hp (Processes caused by visible and UV light)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I2/0308
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HAN Zheng-Fu
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JIANG Zuo-Hong
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CAO Zhuo-Liang
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