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Effects of Proton Irradiation on a CMOS Image Sensor |
| HUANG Qiang;MENG Xiang-Ti |
| Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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HUANG Qiang, MENG Xiang-Ti 2007 Chin. Phys. Lett. 24 549-551 |
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Abstract We perform 9MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm -2. The captured
colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.
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| Keywords:
78.70.-g
78.90.+t
85.40.Qx
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Received: 30 October 2006
Published: 24 February 2007
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| PACS: |
78.70.-g
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(Interactions of particles and radiation with matter)
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78.90.+t
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(Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter)
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85.40.Qx
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(Microcircuit quality, noise, performance, and failure analysis)
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[6] Meng X T, Kang A G, Wang X Y and You Z 2003 Semicond. Sci.Technol. 18 L1 |
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