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Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection |
CAO Guo-Hua;QIN Da-Shan;GUAN Min;CAO Jun-Song;ZENG Yi-Ping;LI Jin-Min |
Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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Cite this article: |
CAO Guo-Hua, QIN Da-Shan, GUAN Min et al 2007 Chin. Phys. Lett. 24 1380-1382 |
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Abstract Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-, 10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuPc) involved in hole injection are fabricated. As compared to the conventional device using a 5nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.
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Keywords:
78.60.Fi
85.60.Jb
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Received: 19 December 2006
Published: 23 April 2007
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[1] Sun Y, Giebink N C, Kanno H, Ma B, Thompson M E and Forrest S R2006 Nature 440 908 [2] Qin D S and Tao Y 2005 J. Appl. Phys. 97 044505 [3] Huang Q, Walzer K, Pfeiffer M, Lyssenko V, He G F and Leo K 2006 Appl. Phys. Lett. 88 113515 [4] Xie J, Zhang D Q, Wang L D, Duan L, Qiao J and Qiu Y 2006 Chin. Phys. Lett. 23 928 [5] Zhou X, Qin D S, Pfeiffer M, Blochwitz-Nimoth J, Werner A,Drechsel J, Maennig B, Leo K, Bold M, Erk P and Hartmann H 2002 Appl. Phys. Lett. 81 4070 [6] Bulovic' V, Tian P, Burrows P E, Gokhale M R, Forrest S Rand Thompson M E 1997 Appl. Phys. Lett. 70 2954 [7] Yuan Y Y, Han S, Grozea D and Lu Z H 2006 Appl. Phys. Lett. 88 093503 [8] Van Slyke S A, Chen C H and Tang C W 1996 Appl. Phys.Lett. 69 2160 [9] Chkoda L, Heske C, Sokolowski M and Umbach E 2000 Appl. Phys.Lett. 77 1093 [10] Burrows P E and Forrest S R 1994 Appl. Phys. Lett. 642285 [11] Hill I G, Rajagopal A, Kahn A and Hu Y 1998 Appl.Phys. Lett. 73 662 [12] Forrest S R, Yoon W Y, Leu L Y and So F F 1989 J. Appl.Phys. 66 5908 [13] Wang J, Wang H B, Yan X J, Huang H C and Yan D H 2005 Appl.Phys. Lett. 87 093507 |
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