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Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate |
| XUE Xian-Ying1;WANG Yu-Zhu1;JIA Quan-Jie1;WANG Yong1;CHEN Yu1;JIANG Xiao-Ming1;ZHU Yan-Yan2;JIANG Zui-Min2 |
| 1Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000492Surface Physics Laboratory, Fudan University, Shanghai 200433 |
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| Cite this article: |
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XUE Xian-Ying, WANG Yu-Zhu, JIA Quan-Jie et al 2007 Chin. Phys. Lett. 24 1649-2652 |
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Abstract Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal
domains. The interplanar spacing d in-plane residual strain tensor ε| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk
Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.
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| Keywords:
61.10.Nz
68.55.-a
68.55.Jk
61.10.Kw
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Received: 29 January 2007
Published: 17 May 2007
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