Chin. Phys. Lett.  2007, Vol. 24 Issue (6): 1720-1723    DOI:
Original Articles |
Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals
LIU Hong-De;KONG Yong-Fa;HU Qian;WU Ri-Wen;WANG Wen-Jie;LI Xiao-Chun;CHEN Shao-Lin;LIU Shi-Guo;XU Jing-Jun
The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457
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LIU Hong-De, KONG Yong-Fa, HU Qian et al  2007 Chin. Phys. Lett. 24 1720-1723
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Abstract We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.
Keywords: 77.80.Dj      77.80.Fm      77.84.Dy     
Received: 16 November 2006      Published: 17 May 2007
PACS:  77.80.Dj (Domain structure; hysteresis)  
  77.80.Fm (Switching phenomena)  
  77.84.Dy  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I6/01720
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LIU Hong-De
KONG Yong-Fa
HU Qian
WU Ri-Wen
WANG Wen-Jie
LI Xiao-Chun
CHEN Shao-Lin
LIU Shi-Guo
XU Jing-Jun
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