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Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition |
ZHAO Yong-Mei;SUN Guo-Sheng;LI Jia-Ye;LIU Xing-Fang;WANG Lei ZHAO
Wan-Shun;LI Jin-Min |
| Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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ZHAO Yong-Mei, SUN Guo-Sheng, LI Jia-Ye et al 2007 Chin. Phys. Lett. 24 1753-1755 |
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Abstract A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45μm is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.
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| Keywords:
81.05.Zx
81.15.Gh
82.80.Ms
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Received: 17 January 2007
Published: 17 May 2007
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| PACS: |
81.05.Zx
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(New materials: theory, design, and fabrication)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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82.80.Ms
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(Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI))
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