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High-Power Electroabsorption Modulator Using Intrastep Quantum Well |
| CHENG Yuan-Bing;PAN Jiao-Qing;ZHOU Fan;ZHU Hong-Liang;ZHAO Ling-Juan;WANG Wei |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, 100083 Beijing |
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| Cite this article: |
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CHENG Yuan-Bing, PAN Jiao-Qing, ZHOU Fan et al 2007 Chin. Phys. Lett. 24 2128-2130 |
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Abstract An electroabsorption modulator using the intrastep quantum well (IQW)
active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10dB/V and low capacitance (<0.42pF), with which an ultra high frequency (>15GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.
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| Keywords:
85.30.Vw
78.66.-w
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Received: 13 March 2007
Published: 25 June 2007
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[1] Aoki M, Suzuki M, Sano H , Kawano T, Ido T, Taniwatari T, Uomi Kand Takai A 1993 IEEE J. Quantum Electron. 29 2088
[2] Pappert S A, Orazi R J, Vu T T, Lin S C, Clawson A R and Yu P KL 1990 IEEE Photon. Technol. Lett. 2 257
[3] Yang X H et al 2006 Chin. Phys. Lett. 23 3376
[4] Wakita K, Kotaka I, Matsumoto S, Iga R, Kondo S and Noguchi Y 1998 Jpn. J. Appl. Phys. I 37 1432
[5] Loi K. K, Sakamoto I, Mei X. B, Tu C W and Chang W S C 1996 IEEE Photon. Technol. Lett. 8 626
[6] Miller D A B, Chemla D S, Damen T C, Gossard A C, Wiegmann W, WoodT H and Burrus C A 1984 Phys. Rev. Lett. 53 2173
[7] Fox A M, Miller A B D, Livescu G, Cunningham J E and Jan W Y 1991 IEEE J. Quantum Electron. 27 2281
[8] Bastard G, Mendez E E, Chang L L and Esaki L 1983 CondensedMatter 28 3241
[9] Ougazzaden A and Devaux F 1996 Appl. Phys. Lett. 694131
[10] Devaux F, Harmand J C, Dias I F L, Guettler T, Krebs O and VoisinP 1997 Electron. Lett. 33 161
[11] Shina D S, Yu Paul K L 2001 J. Appl. Phys. 89 1515
[12] Morita M, Goto K and Suzuki T 1990 J. Appl. Phys. 291663
[13] Chen W Q and Andersson T G 1992 Semicond. Sci. Technol. 7 828
[14] Yuh P F and Wang K L 1989 IEEE J. Quantum. Electron. 25 1671 |
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