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Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD |
| LIU Yan-Yan1;ZHANG Qing-Yu1;Elizabeth BAUER-GROSSE2 |
| 1State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 1160242Laboratoire de Science et Génie des Surfaces, UMR 7570, Ecole des Mines, Parc de Saurupt, Nancy Cedex 54042, France |
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| Cite this article: |
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LIU Yan-Yan, ZHANG Qing-Yu, Elizabeth BAUER-GROSSE 2007 Chin. Phys. Lett. 24 3502-3505 |
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Abstract Transmission electron microscopy is applied to study the diamond film grown in a CH4 and H2 gaseous mixture by microwave plasma assisted chemical vapour deposition. Defects in the nanometre scale, dislocation loops, are
first observed in diamond films. The dislocation loops are found to be of co-existence with planar defects and are next to the planar defects for {111} faceting grains. A possible mechanism is suggested to interpret the co-existence of dislocation loops with planar defects.
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| Keywords:
68.37.Lp. 68.55.Ln
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Received: 09 August 2007
Published: 03 December 2007
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