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Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al2O3(0001) Surface by Using Wurtzite MgO Buffer |
| YUAN Hong-Tao1;LIU Yu-Zi1;WANG Xi-Na1;LI Han-Dong1;WANG Yong1;ZENG Zhao-Quan1;MEI Zeng-Xia1;DU Xiao-Long1;JIA Jin-Feng2;XUE Qi-Kun2,1;ZHANG Ze3 |
| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1000802Department of Physics, Tsinghua University, Beijing 1000843Beijing University of Technology, Beijing 100022 |
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| Cite this article: |
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YUAN Hong-Tao, LIU Yu-Zi, WANG Xi-Na et al 2007 Chin. Phys. Lett. 24 2408-2411 |
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Abstract The controlled growth of Zn-polar ZnO films on Al-terminated αAl2O3 (0001) substrates is investigated by the radio-frequency plasma-assisted molecular beam epitaxy method. Prior to the growth, αAl2O3 (0001) surface is modified by an ultrathin MgO layer, which serves as a uniform template for epitaxy of
Zn-polar ZnO films. The microstructures of ZnO/MgO/Al2O3 interface are investigated by in-situ reflection high-energy electron diffraction observations and ex-situ high-resolution transmission electron microscopy characterization. It is found that under Mg-rich condition, the achievement of the wurtzite MgO ultrathin layer plays a key role in the subsequent growth of Zn-polar ZnO. An
interfacial atomic model is proposed to explain the mechanism of polarity selection of both MgO and ZnO films.
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| Keywords:
81.15.Hi
61.14.Hg
61.14.Lj
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Received: 10 May 2007
Published: 25 July 2007
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