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Structure Stability of LaAlO3 Thin Films on Si Substrates |
| HE Meng;LIU Guo-Zhen;XIANG Wen-Feng;Lü Hui-Bin;JIN Kui-Juan;ZHOU Yue-Liang;YANG Guo-Zhen |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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HE Meng, LIU Guo-Zhen, XIANG Wen-Feng et al 2007 Chin. Phys. Lett. 24 2671-2674 |
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Abstract A series of amorphous and single-crystalline LaAlO3 (LAO) thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO
composition during the deposition is very important for the structure stability of LAO thin films.
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| Keywords:
77.55.+f
68.60.Dv
61.10.Nz
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Received: 17 April 2007
Published: 16 August 2007
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