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Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering |
XU Wen-Bin;DONG Shu-Rong;WANG De-Miao |
| Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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XU Wen-Bin, DONG Shu-Rong, WANG De-Miao 2007 Chin. Phys. Lett. 24 2681-2684 |
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Abstract SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg's work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter the
target-poisoning mode when the preset gas flow (N2 in this work) is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to 1 and N2 supply fixed at 1 sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.
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| Keywords:
81.15.Aa
81.15.Cd
77.55.+f
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Received: 03 February 2007
Published: 16 August 2007
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